ALD Principle

Atomic Layer Deposition or ALD is a thin film synthesis technique, based on self-limiting surface chemical reactions between precursors in vapor form. The deposition is done atomic layer by atomic layer. ALD grants an excellent control of the coatings conformality (uniformity of thickness), their structure and chemical composition on substrates with complex geometries.

ALD principle
ALD principle

Examples of ALD applications

Flexible electronics

High κ dielectric films

OLED passivation

Some Research Themes


  • Multilayer: magnetic field screening for particle accelerators

  • Qubits and quantum computer
  • New superconducting alloys
  • New applications: quantum phase jump junctions, with load interference, kinetic inductance …

Controlled doping

Rare earth ions in oxide matrices for high power laser applications. Dopant in superconductors for optimization of the response under intense fields.

Diffusion barriers

Nitride protective deposits on filters in a radioactive

The ALD platform

  • 7 precursor lines
  • In-situ characterization (Residual Gas Analyser and Quartz Crystal Microbalance)
  • Operating temperatures: 20 to 450°C
  • Annealing tubular oven (max. 1100°C)
  • Incoming: vacuum deposition chamber for deposition on large structures
ALD platform